Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors

In this work, theoretically/mathematically simulated (TMS) model is presented for the photoacoustic (PA) frequency response of a semiconductor in minimum volume PA cell. By analyzing TMS model, influences thermal diffusivity and linear coefficient expansion on silicon sample were investigated two methods developed their estimation. The first one self consistent inverse procedure solving exponential problems mathematical physics, based regression. second one, well trained three-layer perceptron with back propagation, upon theory artificial neural networks, presented. These problem concepts are applied to thermo-elastic characterization silicon, compared discussed domain characterization.